Schottky diode temperature sensor for pressure sensor

The small silicon chip of Schottky diode (0.8 × 0.8 0.4 mm3) with planar arrangement electrodes (chip PSD) as temperature sensor, which functions under the operating conditions pressure was developed. forward current-voltage I–V characteristic PSD is determined by potential barrier between Mo and n-Si (ND = 3 1015 cm?3). Forward voltage UF 208 ± 6 mV coefficient TC -1.635 0.015 mV/°C (with linearity kT < % for range -65 to +85 °C) at supply current IF =1 mA achieved. reverse has high breakdown UBR > 85 V low leakage IL 5 ?A 25 °C 130 (UR 20 V) because contains structure two p-type guard rings along anode perimeter. application wider from +115 proved. separate sensor located a distance less than 1.5 mm chip. transmits input data compensation errors ASIC direct measurement.